Infineon · FETs & Power MOSFETs · MPN IRF3709PBF
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| Gate Charge(Qg) | 41nC@5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.1W;120W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.672nF |
30V 90A 3V 9mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS