Infineon IRF343

Infineon · FETs & Power MOSFETs · MPN IRF343

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Specifications

Drain to Source Voltage400V
Gate Charge(Qg)-
Current - Continuous Drain(Id)8.3A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation125W
RDS(on)800mΩ
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

400V 8.3A 125W 800mΩ 1 N-channel N-Channel TO-3 Single FETs, MOSFETs

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