Infineon IRF3415PBF

Infineon · FETs & Power MOSFETs · MPN IRF3415PBF

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Specifications

Gate Charge(Qg)200nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)640pF
Current - Continuous Drain(Id)43A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)340pF
RDS(on)42mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.4nF
TypeN-Channel

Technical details

N-Channel 150V 43A 200W Through Hole TO-220AB

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