Infineon IRF341

Infineon · FETs & Power MOSFETs · MPN IRF341

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Specifications

Drain to Source Voltage350V
Gate Charge(Qg)41nC
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)550mΩ@10V
Input Capacitance(Ciss)1.25nF
TypeN-Channel

Technical details

350V 10A 4V 125W 550mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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