Infineon IRF3315SPBF

Infineon · FETs & Power MOSFETs · MPN IRF3315SPBF

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)95nC
Current - Continuous Drain(Id)21A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)82mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
TypeN-Channel

Technical details

150V 21A 4V 3.8W 82mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS

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