Infineon IRF3205PBF

Infineon · FETs & Power MOSFETs · MPN IRF3205PBF

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Specifications

Gate Charge(Qg)146nC@10V
Drain to Source Voltage55V
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)211pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.247nF
TypeN-Channel

Technical details

N-Channel 55V 110A 200W Through Hole TO-220AB

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