Infineon IRF2807PBF

Infineon · FETs & Power MOSFETs · MPN IRF2807PBF

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Specifications

Gate Charge(Qg)160nC@10V
Drain to Source Voltage75V
Output Capacitance(Coss)610pF
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation230W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)13mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.82nF
TypeN-Channel

Technical details

N-Channel 75V 75A 230W Through Hole TO-220AB

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