Infineon · FETs & Power MOSFETs · MPN IRF2805PBF
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| Gate Charge(Qg) | 230nC |
|---|---|
| Drain to Source Voltage | 55V |
| Current - Continuous Drain(Id) | 175A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 330W |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF |
| RDS(on) | 4.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.11nF |
| Type | N-Channel |
N-Channel 55V 175A 330W Through Hole TO-220AB