Infineon IRF2804SPBF-IR

Infineon · FETs & Power MOSFETs · MPN IRF2804SPBF-IR

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)240nC
Current - Continuous Drain(Id)270A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
RDS(on)2.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.45nF
TypeN-Channel

Technical details

40V 270A 4V 300W 2.3mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS

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