Infineon IRF253

Infineon · FETs & Power MOSFETs · MPN IRF253

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Specifications

Drain to Source Voltage200V
Current - Continuous Drain(Id)25A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation150W
RDS(on)-
Number1 N-channel
TypeN-Channel

Technical details

200V 25A 150W 1 N-channel N-Channel TO-204AE(TO-3) Single FETs, MOSFETs RoHS

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