Infineon · FETs & Power MOSFETs · MPN IRF250P224
No reviews yet — be the first to review Infineon IRF250P224.
| Gate Charge(Qg) | 203nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 128A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 556W |
| Reverse Transfer Capacitance (Crss@Vds) | 8.3pF |
| RDS(on) | 12mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.915nF |
N-Channel 250V 128A 556W Through Hole TO-247AC