Infineon · FETs & Power MOSFETs · MPN IRF200S234
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| Gate Charge(Qg) | 162nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 417W |
| Reverse Transfer Capacitance (Crss@Vds) | 142pF |
| RDS(on) | 16.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.484nF |
N-Channel 200V 90A 417W Surface Mount D2PAK