Infineon · FETs & Power MOSFETs · MPN IRF200P223
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| Gate Charge(Qg) | 68nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 313W |
| Reverse Transfer Capacitance (Crss@Vds) | 8.7pF |
| RDS(on) | 9.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.094nF |
200V 100A 2V 313W 9.5mΩ@10V 1 N-channel TO-247AC Single FETs, MOSFETs RoHS