Infineon IRF1405PBF

Infineon · FETs & Power MOSFETs · MPN IRF1405PBF

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Specifications

Gate Charge(Qg)260nC@10V
Drain to Source Voltage55V
Current - Continuous Drain(Id)169A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation330W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)5.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.48nF

Technical details

N-Channel 55V 169A 330W Through Hole TO-220AB

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