Infineon IRF135B203

Infineon · FETs & Power MOSFETs · MPN IRF135B203

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Specifications

Gate Charge(Qg)270nC@10V
Drain to Source Voltage135V
Current - Continuous Drain(Id)129A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation441W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)8.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.7nF

Technical details

135V 129A 4V 441W 8.4mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS

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