Infineon IRF1324PBF

Infineon · FETs & Power MOSFETs · MPN IRF1324PBF

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Specifications

Gate Charge(Qg)240nC@10V
Drain to Source Voltage24V
Output Capacitance(Coss)3.44nF
Current - Continuous Drain(Id)353A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)1.96nF
RDS(on)1.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.59nF
TypeN-Channel

Technical details

N-Channel 24V 353A 300W Through Hole TO-220AB

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