Infineon IRF1310NSTRLPBF

Infineon · FETs & Power MOSFETs · MPN IRF1310NSTRLPBF

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Specifications

Gate Charge(Qg)110nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)42A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)230pF
RDS(on)36mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.9nF

Technical details

N-Channel 100V 42A 160W Surface Mount D2PAK

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