Infineon · FETs & Power MOSFETs · MPN IRF1310NSPBF-INF
No reviews yet — be the first to review Infineon IRF1310NSPBF-INF.
| Gate Charge(Qg) | 110nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 42A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.8W;160W |
| RDS(on) | 36mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.9nF |
100V 42A 4V 36mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS