Infineon · FETs & Power MOSFETs · MPN IRF1104PBF
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| Gate Charge(Qg) | 93nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 1.1nF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 170W |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF |
| RDS(on) | 9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.9nF |
| Type | N-Channel |
40V 100A 4V 170W 9mΩ@10V 1 N-channel N-Channel TO-220AB-3 Single FETs, MOSFETs RoHS