Infineon IRF1010NSTRLPBF

Infineon · FETs & Power MOSFETs · MPN IRF1010NSTRLPBF

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Specifications

Gate Charge(Qg)120nC@10V
Drain to Source Voltage55V
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation180W
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.21nF

Technical details

N-Channel 55V 85A 180W Surface Mount D2PAK

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