Infineon · FETs & Power MOSFETs · MPN IRF1010NPBF
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| Gate Charge(Qg) | 120nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 180W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 11mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.21nF |
55V 60A 4V 180W 11mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS