Infineon IRF1010ESTRLPBF

Infineon · FETs & Power MOSFETs · MPN IRF1010ESTRLPBF

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Specifications

Gate Charge(Qg)130nC
Drain to Source Voltage60V
Current - Continuous Drain(Id)84A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)12mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.21nF

Technical details

N-Channel 60V 84A 200W Surface Mount D2PAK

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