Infineon · FETs & Power MOSFETs · MPN IRF100P218
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| Gate Charge(Qg) | 330nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 3.5nF |
| Current - Continuous Drain(Id) | 483A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 556W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 1.28mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 24nF |
100V 483A 556W Through Hole TO-247-3