Infineon IRF100B202

Infineon · FETs & Power MOSFETs · MPN IRF100B202

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Specifications

Gate Charge(Qg)116nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)97A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation221W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)8.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

N-Channel 100V 97A 221W Through Hole ITO-220AB-3

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