Infineon · FETs & Power MOSFETs · MPN IRF100B201
4.0/5 from 1 engineer review.
| Configuration | - |
|---|---|
| Gate Charge(Qg) | 255nC@10V |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 660pF |
| Current - Continuous Drain(Id) | 192A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 441W |
| Reverse Transfer Capacitance (Crss@Vds) | 310pF |
| RDS(on) | 4.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.5nF |
N-Channel 100V 192A 441W Through Hole TO-220AB