Infineon · FETs & Power MOSFETs · MPN IQFH36N04NM6ATMA1
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 309nC@10V |
| Current - Continuous Drain(Id) | 656A |
| Output Capacitance(Coss) | 6.02nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 300W |
| RDS(on) | 0.36mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 178pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 18.6nF |
| Type | N-Channel |
40V 656A 2.8V 300W 0.36mΩ@10V 1 N-channel N-Channel TSON-12 Single FETs, MOSFETs RoHS