Infineon IQEH80NE2LM7UCGSCATMA1

Infineon · FETs & Power MOSFETs · MPN IQEH80NE2LM7UCGSCATMA1

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Specifications

Output Capacitance(Coss)1.1nF
Pd - Power Dissipation107W
Drain to Source Voltage25V
Configuration-
Gate Charge(Qg)37nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.7V
RDS(on)0.71mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)52pF
Number1 N-channel
Input Capacitance(Ciss)3nF

Technical details

107W 25V 1.7V 0.71mΩ@10V 1 N-channel N-Channel TFN-9 Single FETs, MOSFETs RoHS

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