Infineon · FETs & Power MOSFETs · MPN IQEH54NE2LM7UCGATMA1
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| Output Capacitance(Coss) | 1.8nF |
|---|---|
| Pd - Power Dissipation | 150W |
| Drain to Source Voltage | 25V |
| Configuration | - |
| Gate Charge(Qg) | 57nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Reverse Transfer Capacitance (Crss@Vds) | 81pF |
| RDS(on) | 0.47mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.7nF |
150W 25V 1.7V 0.47mΩ@10V 1 N-channel N-Channel TFN-9 Single FETs, MOSFETs RoHS