Infineon IQE065N10NM5SCATMA1

Infineon · FETs & Power MOSFETs · MPN IQE065N10NM5SCATMA1

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Specifications

Gate Charge(Qg)43nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)440pF
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation100W
RDS(on)6.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)32pF
Number1 N-channel
Input Capacitance(Ciss)3nF
TypeN-Channel

Technical details

N-Channel 100V 85A 100W Surface Mount TSON-8

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