Infineon · FETs & Power MOSFETs · MPN IQE065N10NM5CGSCATMA1
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| Gate Charge(Qg) | 43nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 440pF |
| Current - Continuous Drain(Id) | 85A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 2.5W |
| RDS(on) | 6.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF |
| Input Capacitance(Ciss) | 3nF |
| Type | N-Channel |
100V 85A 3.8V 2.5W 6.5mΩ@10V N-Channel Single FETs, MOSFETs RoHS