Infineon · FETs & Power MOSFETs · MPN IQE065N10NM5CGATMA1
No reviews yet — be the first to review Infineon IQE065N10NM5CGATMA1.
| Gate Charge(Qg) | 42nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 440pF |
| Current - Continuous Drain(Id) | 85A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF |
| RDS(on) | 6.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3nF |
| Type | N-Channel |
100V 85A 3.8V 100W 6.5mΩ@10V 1 N-channel N-Channel TTFN-9-1 Single FETs, MOSFETs RoHS