Infineon · FETs & Power MOSFETs · MPN IQE050N08NM5SCATMA1
No reviews yet — be the first to review Infineon IQE050N08NM5SCATMA1.
| Gate Charge(Qg) | 44nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 99A |
| Output Capacitance(Coss) | 480pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 100W |
| RDS(on) | 5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.9nF |
| Type | N-Channel |
N-Channel 80V 99A 100W Surface Mount WHSON-8(3.3x3.3)