Infineon · FETs & Power MOSFETs · MPN IQE050N08NM5CGSCATMA1
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| Gate Charge(Qg) | 44nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 99A |
| Output Capacitance(Coss) | 480pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 100W |
| RDS(on) | 5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| Input Capacitance(Ciss) | 2.9nF |
| Type | N-Channel |
80V 99A 3.8V 100W 5mΩ@10V N-Channel Single FETs, MOSFETs RoHS