Infineon · FETs & Power MOSFETs · MPN IQE050N08NM5CGATMA1
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| Gate Charge(Qg) | 43.2nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 480pF |
| Current - Continuous Drain(Id) | 101A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| RDS(on) | 5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.9nF |
| Type | N-Channel |
80V 101A 3.8V 100W 5mΩ@10V 1 N-channel N-Channel TTFN-9-1 Single FETs, MOSFETs RoHS