Infineon · FETs & Power MOSFETs · MPN IQE046N08LM5CGSCATMA1
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 19nC@4.5V |
| Current - Continuous Drain(Id) | 99A |
| Output Capacitance(Coss) | 507pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF |
| RDS(on) | 5.9mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.25nF |
| Type | N-Channel |
80V 99A 2.3V 100W 5.9mΩ@4.5V 1 N-channel N-Channel PG-WHTFN-9(3.2x3.2) Single FETs, MOSFETs RoHS