Infineon IQE030N06NM5CGATMA1

Infineon · FETs & Power MOSFETs · MPN IQE030N06NM5CGATMA1

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)39nC@10V
Output Capacitance(Coss)780pF
Current - Continuous Drain(Id)137A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation107W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.8nF
TypeN-Channel

Technical details

60V 137A 3.3V 107W 3mΩ@10V 1 N-channel N-Channel TTFN-9-1 Single FETs, MOSFETs RoHS

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