Infineon · FETs & Power MOSFETs · MPN IQE030N06NM5ATMA1
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 49nC@10V |
| Output Capacitance(Coss) | 780pF |
| Current - Continuous Drain(Id) | 137A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Pd - Power Dissipation | 107W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.8nF |
| Type | N-Channel |
60V 137A 3.3V 107W 3mΩ@10V 1 N-channel N-Channel TSON-8-EP(3.3x3.3) Single FETs, MOSFETs RoHS