Infineon · FETs & Power MOSFETs · MPN IQE022N06LM5ATMA1
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| Gate Charge(Qg) | 33nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 151A |
| Output Capacitance(Coss) | 936pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 100W |
| RDS(on) | 2.2mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 63pF |
| Input Capacitance(Ciss) | 4.42nF |
| Type | N-Channel |
60V 151A 2.3V 100W 2.2mΩ@10V N-Channel Single FETs, MOSFETs RoHS