Infineon · FETs & Power MOSFETs · MPN IQE013N04LM6ATMA1
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| Gate Charge(Qg) | 55nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 1.2nF |
| Current - Continuous Drain(Id) | 205A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 107W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 1.35mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.9nF |
| Type | N-Channel |
N-Channel 40V 205A 107W Surface Mount TSON-8