Infineon · FETs & Power MOSFETs · MPN IQE008N03LM5CGSCATMA1
No reviews yet — be the first to review Infineon IQE008N03LM5CGSCATMA1.
| Operating Temperature | -55℃~+150℃ |
|---|---|
| Output Capacitance(Coss) | 1.1nF |
| Configuration | - |
| Current - Continuous Drain(Id) | - |
| Pd - Power Dissipation | 89W |
| RDS(on) | 0.65mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.4nF |
89W 0.65mΩ@10V 1.6V 1 N-channel WHTFN-9 FET, MOSFET Arrays RoHS