Infineon IQE008N03LM5CGATMA1

Infineon · FETs & Power MOSFETs · MPN IQE008N03LM5CGATMA1

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)30nC@4.5V
Output Capacitance(Coss)1.4nF
Current - Continuous Drain(Id)253A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation89W
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)0.65mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.7nF
TypeN-Channel

Technical details

N-Channel 30V 253A 89W Surface Mount TTFN-9-1

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