Infineon · FETs & Power MOSFETs · MPN IQE008N03LM5ATMA1
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 30nC@4.5V |
| Output Capacitance(Coss) | 1.4nF |
| Current - Continuous Drain(Id) | 253A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 89W |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF |
| RDS(on) | 0.85mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.7nF |
30V 253A 2V 89W 0.85mΩ@10V 1 N-channel N-Channel TSON-8-EP(3.3x3.3) Single FETs, MOSFETs RoHS