Infineon · FETs & Power MOSFETs · MPN IQE004NE1LM7CGATMA1
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| Output Capacitance(Coss) | 2.6nF |
|---|---|
| Pd - Power Dissipation | 89W |
| Configuration | - |
| Drain to Source Voltage | 15V |
| Gate Charge(Qg) | 29nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| RDS(on) | 0.37mΩ@7V |
| Reverse Transfer Capacitance (Crss@Vds) | 260pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.8nF |
89W 15V 1.6V 0.37mΩ@7V 1 N-channel N-Channel TTFN-9 Single FETs, MOSFETs RoHS