Infineon IQDH88N06LM5CGATMA1

Infineon · FETs & Power MOSFETs · MPN IQDH88N06LM5CGATMA1

No reviews yet — be the first to review Infineon IQDH88N06LM5CGATMA1.

Specifications

Gate Charge(Qg)152nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)2.6nF
Current - Continuous Drain(Id)447A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation333W
RDS(on)1.24mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)170pF
Number1 N-channel
Input Capacitance(Ciss)14nF
TypeN-Channel

Technical details

N-Channel 60V 447A 333W TTFN-9

Related FETs & Power MOSFETs