Infineon · FETs & Power MOSFETs · MPN IQDH88N06LM5CGATMA1
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| Gate Charge(Qg) | 152nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 2.6nF |
| Current - Continuous Drain(Id) | 447A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 333W |
| RDS(on) | 1.24mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14nF |
| Type | N-Channel |
N-Channel 60V 447A 333W TTFN-9