Infineon · FETs & Power MOSFETs · MPN IQDH45N04LM6CGSCATMA1
No reviews yet — be the first to review Infineon IQDH45N04LM6CGSCATMA1.
| Gate Charge(Qg) | 129nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 611A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 333W |
| RDS(on) | 0.4mΩ@10V;0.5mΩ@4.5V |
| Number | 1 N-channel |
| Type | N-Channel |
40V 611A 1.6V 333W 1 N-channel N-Channel PG-WHTFN-9 Single FETs, MOSFETs RoHS