Infineon · FETs & Power MOSFETs · MPN IQDH45N04LM6CGATMA1
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| Gate Charge(Qg) | 129nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 637A |
| Output Capacitance(Coss) | 3.8nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 333W |
| RDS(on) | 0.58mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12nF |
| Type | N-Channel |
N-Channel 40V 637A 333W WHTFN-9