Infineon · FETs & Power MOSFETs · MPN IQDH45N04LM6ATMA1
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| Output Capacitance(Coss) | 2.9nF |
|---|---|
| Pd - Power Dissipation | 333W |
| Configuration | - |
| Gate Charge(Qg) | 62nC |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF |
| RDS(on) | 0.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9nF |
333W 40V 1.6V 0.4mΩ@10V 1 N-channel N-Channel SON-8 Single FETs, MOSFETs RoHS