Infineon · FETs & Power MOSFETs · MPN IQDH35N03LM5CGSCATMA1
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| Output Capacitance(Coss) | 3.3nF |
|---|---|
| Pd - Power Dissipation | 278W |
| Gate Charge(Qg) | 91nC |
| Configuration | - |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 270pF |
| RDS(on) | 0.31mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14nF |
278W 30V 1.6V 0.31mΩ@10V 1 N-channel N-Channel PG-WHTFN-9 Single FETs, MOSFETs RoHS