Infineon IQDH35N03LM5CGATMA1

Infineon · FETs & Power MOSFETs · MPN IQDH35N03LM5CGATMA1

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)197nC@10V
Output Capacitance(Coss)4.3nF
Current - Continuous Drain(Id)700A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation278W
Reverse Transfer Capacitance (Crss@Vds)470pF
RDS(on)0.35mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)18nF
TypeN-Channel

Technical details

N-Channel 30V 700A WHTFN-9

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