Infineon · FETs & Power MOSFETs · MPN IQDH29NE2LM5CGSCATMA1
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| Output Capacitance(Coss) | 5.4nF |
|---|---|
| Pd - Power Dissipation | 278W |
| Drain to Source Voltage | 25V |
| Configuration | - |
| Gate Charge(Qg) | 88nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| RDS(on) | 0.2mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 380pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13nF |
278W 25V 1.6V 0.2mΩ@10V 1 N-channel N-Channel WHTFN-9 Single FETs, MOSFETs RoHS